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Typical cross-sectional SEM image of our InGaN/GaN MQW nanorod array structure.
PL spectra of all the as-grown InGaN/GaN MQW samples and their corresponding nanorod array structures, measured at 10 K. In all cases, clear phonon replica peaks are observed on the low energy side, and all the nanorod samples show a clear reduction in phonon replica peak, compared to their as-grown equivalent.
An example of how a multiple Gaussian function is fitted to the PL spectra of one of the InGaN/GaN MQW samples where the indium composition is around 13%.
Excitation power dependant PL of the as-grown B and its corresponding nanorod B measured under identical conditions at room temperature as an example. The ratio of integrated PL intensity to excitation power is normalised, giving a comparison of quantum efficiency.
Huang-Rhys factors (S0) for all the as-grown InGaN/GaN MQW samples and their corresponding nanorod structures. FWHM values for the main PL emission peak are also provided for all samples.
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