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Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Scanning electron microscopy (SEM) image of epitaxially grown nanowires by PA-MBE on a (001) Si substrate. (b) HR-TEM image of a single NW. Inset shows the diffraction pattern of the nanowire. (c) A top-down SEM view of the lateral spin valve fabricated on a ∼4 μm long nanowire using e-beam lithography. (d) Ferromagnetic hysteresis measured by the MOKE on a bulk 70 nm thick FeCo film e-beam evaporated on SiO2. The magnetic field is swept in-plane, parallel to the film surface.

Image of FIG. 2.
FIG. 2.

(a) Two-terminal I-V characteristics of a single NW at various temperatures (black line). Non-linear I-V characteristics indicate tunneling transport from the FeCo into the GaN NW through the MgO barrier. (b) ZBR as a function of temperature. The weak temperature dependence (less than an order of magnitude) of the ZBR is a good indication of the tunneling nature of the FeCo/MgO contacts.

Image of FIG. 3.
FIG. 3.

Schematic illustration of the four-terminal non-local measurement scheme.

Image of FIG. 4.
FIG. 4.

Nonlocal magnetoresistance characteristics for channel length of (a) 1.5 μm and (b) 0.7 μm for sample A at room temperature for a constant current bias Iinject = 100 nA.

Image of FIG. 5.
FIG. 5.

Four-terminal Hanle precession curves measured for sample A for a channel length of L = 1.5 μm at T = 300 K. Inset shows a fitting of the channel length dependent four-terminal non-local data.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts