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(a) Scanning electron microscopy (SEM) image of epitaxially grown nanowires by PA-MBE on a (001) Si substrate. (b) HR-TEM image of a single NW. Inset shows the diffraction pattern of the nanowire. (c) A top-down SEM view of the lateral spin valve fabricated on a ∼4 μm long nanowire using e-beam lithography. (d) Ferromagnetic hysteresis measured by the MOKE on a bulk 70 nm thick FeCo film e-beam evaporated on SiO2. The magnetic field is swept in-plane, parallel to the film surface.
(a) Two-terminal I-V characteristics of a single NW at various temperatures (black line). Non-linear I-V characteristics indicate tunneling transport from the FeCo into the GaN NW through the MgO barrier. (b) ZBR as a function of temperature. The weak temperature dependence (less than an order of magnitude) of the ZBR is a good indication of the tunneling nature of the FeCo/MgO contacts.
Schematic illustration of the four-terminal non-local measurement scheme.
Nonlocal magnetoresistance characteristics for channel length of (a) 1.5 μm and (b) 0.7 μm for sample A at room temperature for a constant current bias Iinject = 100 nA.
Four-terminal Hanle precession curves measured for sample A for a channel length of L = 1.5 μm at T = 300 K. Inset shows a fitting of the channel length dependent four-terminal non-local data.
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