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Enhanced THz emission from c-plane In x Ga1− x N due to piezoelectric field-induced electron transport
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View: Figures


Image of FIG. 1.
FIG. 1.

THz waveform for InAs versus In0.07Ga0.93N/GaN heterostructure pumped at 400 nm (∼10 mW) collected from the front and back of the sample. The dashed curve indicates heterostructure emission when pumped at 266 nm normalized to the same number of incident photons at 400 nm pump wavelength. The emission waveform from the back of the sample is of opposite polarity to the front.

Image of FIG. 2.
FIG. 2.

(a) X-ray reciprocal space map of the (105) reflection from the In0.07Ga0.93N layer. (b) Plot of simulated electric field strength due to the piezoelectric and spontaneous polarizations at the interface under coherently strained and fully relaxed conditions. Simulated electric field calculated using 200 nm thick In0.07Ga0.93N atop 200 nm of GaN (n = 1 × 1018 cm−3).

Image of FIG. 3.
FIG. 3.

(a) Simulated electric field at the surface and interface of the In0.07Ga0.93N/GaN heterostructure vs. background carrier concentration. (b) Simulated effective electric field in the In0.07Ga0.93N layer for absorption depths of 150 nm and 50 nm.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced THz emission from c-plane InxGa1−xN due to piezoelectric field-induced electron transport