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Spatial control of magnetic anisotropy for current induced domain wall injection in perpendicularly magnetized CoFeB|MgO nanostructures
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10.1063/1.4711016
/content/aip/journal/apl/100/19/10.1063/1.4711016
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/19/10.1063/1.4711016
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Figures

Image of FIG. 1.
FIG. 1.

(a) Optical micrograph of the CoFeB|MgO nanowire (horizontal line) and the etched regions (vertical lines). (b)-(e) Polar Kerr signal as a function of out of plane field when the Kerr laser spot is placed as shown in (a). Film structure B is used here. Dashed line in (b) shows the hysteresis loop for an unetched nanowire whereas the solid lines in (b)-(e) illustrate the same for nanowires with ∼55% of the MgO layer locally etched.

Image of FIG. 2.
FIG. 2.

(a) and (b) In-plane (black squares) and out of plane (blue circles) field dependence of magnetization of film structure A. Only the Ta cap layer is etched for (a) whereas further etching into the MgO layer (∼55%) is performed for (b). Measurements are made for a continuous film. (c) Saturation magnetization MS and (d) magnetic anisotropy K, deduced from the hysteresis loops, are plotted as a function of the fraction of the etched MgO layer. The left panel on each figure represents MS or K of an unetched film.

Image of FIG. 3.
FIG. 3.

(a) Schematic and the dimensions of the nanowire used. (b) Out of plane field and (c) and (d) extraordinary Hall effect resistance as a function of measurement cycle numbers. The blue circles represent the timing when reset field (±HSAT) is applied, whereas the red squares indicate the timing when ID is applied. ID is 10 μA and 480 μA for (c) and (d), respectively. (e) and (f) Reversal probability maps plotted as a function of ID and HD. The initial magnetic state is magnetization pointing upward (e) and downward (f). Color scale indicates the reversal probability.

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/content/aip/journal/apl/100/19/10.1063/1.4711016
2012-05-09
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spatial control of magnetic anisotropy for current induced domain wall injection in perpendicularly magnetized CoFeB|MgO nanostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/19/10.1063/1.4711016
10.1063/1.4711016
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