Full text loading...
(a) Schematic illustration and (b) SEM image of the fabricated graphene-based TBJ device.
Transfer characteristic (solid line) and transconductance (dashed line) as a function of V BG of the fabricated TBJ device. In this measurement, V DS was applied between the two input branches.
(a) Measured voltage transfer curves for various V BG, (b) curvature at V in = 0 V as a function of V BG, and (c) input branch current-voltage characteristics.
(a) Equivalent circuit model for the graphene-based TBJ device and (b) theoretical voltage transfer characteristics.
Article metrics loading...