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Non-volatile organic memory devices comprising SiO2 and C60 showing 104 switching cycles
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We present a non-volatile organic memory device comprising a thin SiO2 layer, the organic semiconductor C60, and an organic n-type doped layer between two metallic electrodes. The memory device shows a stable hysteresis in the current-voltage characteristics with an ON/OFF ratio in the range of three or higher and reasonable switching behavior with 104 write-read-erase-read cycles. The data retention time reaches from several hours up to several days and depends on the read out frequency. We exclude a filamentary conduction mechanism as cause of the memory effect and propose that the presence of charge carrier traps at the interface of the C60 layer with the oxide causes the hysteresis of this organic non-volatile memory device.
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