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XRD analysis of nickel germanide layers formed (a) at different RTA temperatures (b) at RTA temperature of 280 °C (c) at RTA temperature of 315 °C, and (d) at RTA temperature of 418 °C.
XPS characterization on nickel germanide samples annealed at different RTA temperatures (a) Ge 3d peak and (b) Ni 3p peak.
Scanning electron microscopy studies on nickel germanide samples annealed at (a) 280 °C and (b) 418 °C.
(a) I-V electrical characterization at room temperature of NiGe/n-Ge diodes formed at different RTA temperatures and (b) graph of electron barrier height vs nickel germanide formation temperature.
The linear Richardson plot for NiGe/n-Ge diode annealed at 300 °C.
Atomic ratios of Ge (3d) and Ni (3p) in nickel germanide layers treated at different RTA temperatures from XPS measurements.
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