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Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors
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10.1063/1.4712564
/content/aip/journal/apl/100/19/10.1063/1.4712564
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/19/10.1063/1.4712564

Figures

Image of FIG. 1.
FIG. 1.

XRD analysis of nickel germanide layers formed (a) at different RTA temperatures (b) at RTA temperature of 280 °C (c) at RTA temperature of 315 °C, and (d) at RTA temperature of 418 °C.

Image of FIG. 2.
FIG. 2.

XPS characterization on nickel germanide samples annealed at different RTA temperatures (a) Ge 3d peak and (b) Ni 3p peak.

Image of FIG. 3.
FIG. 3.

Scanning electron microscopy studies on nickel germanide samples annealed at (a) 280 °C and (b) 418 °C.

Image of FIG. 4.
FIG. 4.

(a) I-V electrical characterization at room temperature of NiGe/n-Ge diodes formed at different RTA temperatures and (b) graph of electron barrier height vs nickel germanide formation temperature.

Image of FIG. 5.
FIG. 5.

The linear Richardson plot for NiGe/n-Ge diode annealed at 300 °C.

Tables

Generic image for table
Table I.

Atomic ratios of Ge (3d) and Ni (3p) in nickel germanide layers treated at different RTA temperatures from XPS measurements.

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/content/aip/journal/apl/100/19/10.1063/1.4712564
2012-05-08
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/19/10.1063/1.4712564
10.1063/1.4712564
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