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Flexible thin-film InAs/GaAs quantum dot solar cells
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Figures

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FIG. 1.

Schematic flow diagram of the fabrication process for the InAs/GaAs QD solar cells on plastic films.

Image of FIG. 2.

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FIG. 2.

(a) Atomic force microscope image and (b) room-temperature photoluminescence spectrum of the InAs QDs grown in the InAs/GaAs QD solar-cell structure.

Image of FIG. 3.

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FIG. 3.

(a) Cross-sectional schematic diagram, (b) scanning electron microscope image, and (c) photographs of the fabricated thin-film InAs/GaAs QD solar cells on plastic films. Inset of (b) is a cross-sectional tunneling electron microscope image of the InAs QD layers.

Image of FIG. 4.

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FIG. 4.

Light I–V characteristics of the highest-efficiency cells for each of the bulk reference cells and the thin-film cells on plastic films and Si substrates under AM1.5G, 1-sun illumination.

Tables

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Table I.

Solar-cell performance parameters of the highest-efficiency cells and the highest VOC values for each type of cell under AM1.5G, 1-sun illumination.

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/content/aip/journal/apl/100/19/10.1063/1.4712597
2012-05-08
2014-04-18

Abstract

Thin-film InAs/GaAs quantum dot(QD)solar cells on mechanically flexible plastic films are fabricated. A 4.1-μm-thick compound semiconductorphotovoltaic layer grown on a GaAs substrate is transferred onto a plastic film through a low-temperature bonding technique. We also fabricatethin-film InAs/GaAs quantum dotsolar cells on Si substrates, as alternative low-cost, lightweight, robust substrates. The open-circuit voltages of the thin-filmcells on plastic and Si substrates are equal to that of the as-grown bulk cell on a GaAs substrate, indicating that no material degradation occurs during our bond-and-transfer process.

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Scitation: Flexible thin-film InAs/GaAs quantum dot solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/19/10.1063/1.4712597
10.1063/1.4712597
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