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1.
1. A. Luque and A. Marti, Phys. Rev. Lett. 78, 5014 (1997);
http://dx.doi.org/10.1103/PhysRevLett.78.5014
1. A. J. Nozik, Physica E 14, 115 (2002);
http://dx.doi.org/10.1016/S1386-9477(02)00374-0
1. T. Nozawa and Y. Arakawa, Appl. Phys. Lett. 98, 171108 (2011).
http://dx.doi.org/10.1063/1.3583587
2.
2. J. M. Luther, M. Law, M. C. Beard, Q. Song, M. O. Reese, R. J. Ellingson, and A. J. Nozik, Nano Lett. 8, 3488 (2008);
http://dx.doi.org/10.1021/nl802476m
2. G. Konstantatos and E. H. Sargent, Nat. Nanotechnol. 5, 391 (2010).
http://dx.doi.org/10.1038/nnano.2010.78
3.
3. S. M. Hubbard, C. D. Cress, C. G. Bailey, R. P. Raffaelle, S. G. Bailey, and D. M. Wilt, Appl. Phys. Lett. 92, 123512 (2008);
http://dx.doi.org/10.1063/1.2903699
3. D. Guimard, R. Morihara, D. Bordel, K. Tanabe, Y. Wakayama, M. Nishioka, and Y. Arakawa, Appl. Phys. Lett. 96, 203507 (2010);
http://dx.doi.org/10.1063/1.3427392
3. C. G. Bailey, D. V. Forbes, R. P. Raffaelle, and S. M. Hubbard, Appl. Phys. Lett. 98, 163105 (2011);
http://dx.doi.org/10.1063/1.3580765
3. K. A. Sablon, J. W. Little, V. Mitin, A. Sergeev, N. Vagidov, and K. Reinhardt, Nano Lett. 11, 2311 (2011).
http://dx.doi.org/10.1021/nl200543v
4.
4. J. Yoon, A. J. Baca, S.-I. Park, P. Elvikis, J. B. Geddes III, L. Li, R. H. Kim, J. Xiao, S. Wang, T.-H. Kim, M. J. Motala, B. Y. Ahn, E. B. Duoss, J. A. Lewis, R. G. Nuzzo, P. M. Ferreira, Y. Huang, A. Rockett, and J. A. Rogers, Nature Mater. 7, 907 (2008);
http://dx.doi.org/10.1038/nmat2287
4. G. Konstantatos, L. Levina, J. Tang, and E. H. Sargent, Nano Lett. 8, 4002 (2008);
http://dx.doi.org/10.1021/nl802600z
4. J. Yoon, L. Li, A. V. Semichaevsky, J. H. Ryu, H. T. Johnson, R. G. Nuzzo, and J. A. Rogers, Nature Commun. 2, 343 (2011).
http://dx.doi.org/10.1038/ncomms1318
5.
5. M. Konagai, M. Sugimoto, and K. Takahashi, J. Cryst. Growth 45, 277 (1978).
http://dx.doi.org/10.1016/0022-0248(78)90449-9
6.
6. K. Tanabe, A. Fontcuberta i Morral, H. A. Atwater, D. J. Aiken, and M. W. Wanlass, Appl. Phys. Lett. 89, 102106 (2006);
http://dx.doi.org/10.1063/1.2347280
6. K. Tanabe, D. Guimard, D. Bordel, S. Iwamoto, and Y. Arakawa, Opt. Express 18, 10604 (2010);
http://dx.doi.org/10.1364/OE.18.010604
6. K. Tanabe, K. Watanabe, and Y. Arakawa, Sci. Rep. 2, 349 (2012).
http://dx.doi.org/10.1038/srep00349
7.
7. J. M. Zahler, K. Tanabe, C. Ladous, T. Pinnington, F. D. Newman, and H. A. Atwater, Appl. Phys. Lett. 91, 012108 (2007).
http://dx.doi.org/10.1063/1.2753751
8.
8. K. Tanabe, M. Nomura, D. Guimard, S. Iwamoto, and Y. Arakawa, Opt. Express 17, 7036 (2009).
http://dx.doi.org/10.1364/OE.17.007036
9.
9. R. B. Bergmann, Appl. Phys. A 69, 187 (1999);
http://dx.doi.org/10.1007/s003390050989
9. R. Brendel, Jpn. J. Appl. Phys., Part 1 40, 4431 (2001).
http://dx.doi.org/10.1143/JJAP.40.4431
10.
10. E. Yablonovitch, T. Gmitter, J. P. Harbison, and R. Bhat, Appl. Phys. Lett. 51, 2222 (1987).
http://dx.doi.org/10.1063/1.98946
11.
11. M. Bruel, Electron. Lett. 31, 1201 (1995);
http://dx.doi.org/10.1049/el:19950805
11. P. Chen, Y. Jing, S. S. Lau, D. Xu, L. Mawst, T. L. Alford, C. Paulson, and T. F. Kuech, Appl. Phys. Lett. 92, 092107 (2008);
http://dx.doi.org/10.1063/1.2890494
11. W. Chen, P. Chen, J. E. Pulsifer, T. L. Alford, T. F. Kuech, and S. S. Lau, Appl. Phys. Lett. 92, 212109 (2008).
http://dx.doi.org/10.1063/1.2937409
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/content/aip/journal/apl/100/19/10.1063/1.4712597
2012-05-08
2016-12-02

Abstract

Thin-film InAs/GaAs quantum dot(QD)solar cells on mechanically flexible plastic films are fabricated. A 4.1-μm-thick compound semiconductorphotovoltaic layer grown on a GaAs substrate is transferred onto a plastic film through a low-temperature bonding technique. We also fabricatethin-film InAs/GaAs quantum dotsolar cells on Si substrates, as alternative low-cost, lightweight, robust substrates. The open-circuit voltages of the thin-filmcells on plastic and Si substrates are equal to that of the as-grown bulk cell on a GaAs substrate, indicating that no material degradation occurs during our bond-and-transfer process.

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