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Flexible thin-film InAs/GaAs quantum dot solar cells
4. J. Yoon, A. J. Baca, S.-I. Park, P. Elvikis, J. B. Geddes III, L. Li, R. H. Kim, J. Xiao, S. Wang, T.-H. Kim, M. J. Motala, B. Y. Ahn, E. B. Duoss, J. A. Lewis, R. G. Nuzzo, P. M. Ferreira, Y. Huang, A. Rockett, and J. A. Rogers, Nature Mater. 7, 907 (2008);
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Thin-film InAs/GaAs quantum dot(QD)solar cells on mechanically flexible plastic films are fabricated. A 4.1-μm-thick compound semiconductorphotovoltaic layer grown on a GaAs substrate is transferred onto a plastic film through a low-temperature bonding technique. We also fabricatethin-film InAs/GaAs quantum dotsolar cells on Si substrates, as alternative low-cost, lightweight, robust substrates. The open-circuit voltages of the thin-filmcells on plastic and Si substrates are equal to that of the as-grown bulk cell on a GaAs substrate, indicating that no material degradation occurs during our bond-and-transfer process.
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