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Cd-free buffer layer materials on Cu2ZnSn(SxSe1−x)4: Band alignments with ZnO, ZnS, and In2S3
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10.1063/1.4714737
/content/aip/journal/apl/100/19/10.1063/1.4714737
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/19/10.1063/1.4714737

Figures

Image of FIG. 1.
FIG. 1.

Top left: Comparison of ZnO/CZTSSe (pumped and unpumped) and bare CZTSSe (pumped) spectra. Bottom left: Blowup of the valence band edge region showing the valence band offsets. Right: Schematic diagram of the electronic structure at the interface as derived from the dynamic UPS spectra.

Image of FIG. 2.
FIG. 2.

Top left: Comparison of ZnS/CZTSSe (pumped and unpumped) and bare CZTSSe (pumped) spectra. Bottom left: Blowup of the valence band edge region showing the valence band offsets. Right: Schematic diagram of the electronic structure at the interface as derived from the dynamic UPS spectra.

Image of FIG. 3.
FIG. 3.

Top left: Spectra of CZTSSe and In2S3/CZTSSe probe only, pumped with 800 nm and pumped with 400 nm. Bottom left: Expanded region near the valence edge of the In2S3/CZTSSe. Right: Band offset diagram for In2S3/CZTSSe derived from spectroscopic data.

Image of FIG. 4.
FIG. 4.

J-V measurements of devices with ZnO, ZnS, In2S3 and CdS buffer layers (no MgF2 antireflective coating) under AM1.5 solar illumination conditions.

Tables

Generic image for table
Table I.

Performance characteristics of Cd-free solar cells (and CdS reference).

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/content/aip/journal/apl/100/19/10.1063/1.4714737
2012-05-10
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Cd-free buffer layer materials on Cu2ZnSn(SxSe1−x)4: Band alignments with ZnO, ZnS, and In2S3
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/19/10.1063/1.4714737
10.1063/1.4714737
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