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Magnetoresistance oscillations arising from edge-localized electrons in low-defect graphene antidot-lattices
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10.1063/1.3675547
/content/aip/journal/apl/100/2/10.1063/1.3675547
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3675547
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic view of a honeycomb-like GADL, which shows the situation where the boundaries are aligned with the carbon hexagonal lattice of graphene to form a zigzag edge. Narrow spaces between two ADs correspond to GNRs with width W. The actual structure has a larger number of hexagonal carbon unit cells per GNR (length∼40 nm and W∼20 nm). This GADL provides at least three large advantages (see supplementary material (2)).21 (b) AFM image of GADL formed using an etching mask with mean AD diameter φ ∼ 80 nm and W ∼20 nm. (c) MFM image of an H-terminated GADL. A CoPtCr-coated Si probe was used for measurements in tapping mode. The inter-AD regions, which exhibit darker color, imply a high density of polarized spins. In particular, evidence for AD-edge-localized spins may be seen in the parts shown by the arrows. (d)(e) Typical Raman spectra of a GADL (d) prior and (e) after annealing at 800 °C, taken with a laser excitation of 532 nm and 0.14 mW incident power at room temperature. Because the laser beam diameter φ used for the measurement is 1 µm, the result reflects edge information from ∼60 ADs. Inset of (e) distribution of I(D)/I(G) in 8 samples. 15 points at 5 different positions were observed per sample. Dotted and solid lines above and below 0.5 denote I(D)/I(G) prior and after annealing, respectively. Black and open symbols correspond to the main panels of (d) and (e), respectively.

Image of FIG. 2.
FIG. 2.

(a) Schematic views of electron trajectories under magnetic fields and the unit cells in a honeycomb-like GADL (see supplementary material (6)). (b) MR (ρxx) measurements of the hydrogen-terminated ∼10-layer GADL (with a mean φ ∼80 nm and mean a ∼150 nm, implying an aspect ratio φ/a ∼0.5) as a function of B applied perpendicular to the GADL at T = 1.5 K. Measurements were performed by a standard low-frequency (13 Hz) ac lock-in technique using a constant excitation current of 1 nA. (c) (d) Fourier power spectra of sample in (b) for (c) low B and (d) high B regions.

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/content/aip/journal/apl/100/2/10.1063/1.3675547
2012-01-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Magnetoresistance oscillations arising from edge-localized electrons in low-defect graphene antidot-lattices
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3675547
10.1063/1.3675547
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