1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The influence of anisotropic gate potentials on the phonon induced spin-flip rate in GaAs quantum dots
Rent:
Rent this article for
USD
10.1063/1.3675620
/content/aip/journal/apl/100/2/10.1063/1.3675620
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3675620
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Phonon induced spin-flip rate due to spin-orbit admixture mechanism as a function of QDs radius in symmetric QDs (a = b = 1). We choose B = 1 T. Also, inset plot shows the g-factor vs. QDs radius. The level crossing point occurs at 0 = 73 nm. The material constants for GaAs QDs have been chosen from Refs. 4 and 19 as follows: g 0 = −0.44, m = 0.067, γR  = 4.4 Å2, γD  = 26 eVÅ3, eh 14 = 2.34 × 10−5 erg/cm, sl  = 5.14 × 105 cm/s, st  = 3.03 × 105 cm/s, and ρ = 5.3176 g/cm3. At E = 7 × 105 V/cm shown by dashed-dotted lines, the admixture mechanism due to spin-orbit coupling on the spin-flip rate is quite different because the electron spin states change their sign in these regime (see inset plot).

Image of FIG. 2.
FIG. 2.

(Color online) Phonon induced spin-flip rate due to spin-orbit admixture mechanism as a function of QDs radius in asymmetric QDs (solid and dotted lines). As a reference, we also plotted spin-flip rate vs. QDs radius for symmetric QDs (dashed and dashed dotted lines). We choose the potentials characterized by a = 0.5 & b = 2 for asymmetric QDs and a = b = 1 for symmetric QDs. Also we choose B = 1 T. As we see, spin-flip rate increases approximately by one half order of magnitude in asymmetric QDs.

Image of FIG. 3.
FIG. 3.

(Color online) (a) The anisotropic effect on the g-factor vs. QDs radius at the potentials characterized by a = b = 1 (solid line) for isotropic QDs and a = 0.5, b = 2 (dashed-dotted line) for anisotropic QDs. We choose E = 105 V/cm and B = 1 T. Anisotropic potential gives the suppression of the g-factor towards bulk crystal and hence reduces the level crossing point to lower QDs radius. Accidental degeneracy appears in the range of 70−80 nm QDs radius which gives the cusp like structure in the spin-flip rate (see Refs. 17, 18, and 25). (b) The interplay between Rashba and Dresselhaus spin-orbit couplings on the g-factor vs. the electric field in QDs induces the anisotropic effect due to the suppression of the g-factor towards bulk crystal. Here, we choose 0 = 20 nm, B = 1 T, and a = b = 1.

Loading

Article metrics loading...

/content/aip/journal/apl/100/2/10.1063/1.3675620
2012-01-10
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The influence of anisotropic gate potentials on the phonon induced spin-flip rate in GaAs quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3675620
10.1063/1.3675620
SEARCH_EXPAND_ITEM