Full text loading...
(Color online) Schematic illustration of the key steps involved in the fabrication of GaN LEDs with MLG electrode.
(Color online) (a) Tapping mode AFM image of a representative graphene film transferred to Al2O3 substrate and surface doped with AuCl3. The reduced Au particles can be clearly visualized from the image. (b) Raman spectra of the transferred graphene film at different regions probed by using a He-Ne laser with an excitation wavelength of 632.8 nm. Inset shows an optical image of the graphene where the regions inspected are indicated by circles.
(Color online) (a) UPS spectra of as-grown and doped graphene films around the secondary-electron cutoff region and the Fermi level position. Inset shows variation in work function as a function of AuCl3 concentration. (b) Schematic illustration of the energy band diagram at the graphene/p-GaN interface under different conditions.
(Color online) I-V characteristics of the GaN LEDs with different electrode schemes studied. The inset shows the optical image of corresponding LEDs during light emission at an injection current of 0.5 mA.
Article metrics loading...