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Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices
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10.1063/1.3675633
/content/aip/journal/apl/100/2/10.1063/1.3675633
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3675633
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic view of the device structure. (b) Raman spectrum of SLG. (c) SEM image of SLG channel after the formation of S/D electrodes. (d) Cross-sectional TEM image of Ti/Al2O3/HfOx/Al2O3/SLG/SiO2 stacked layers.

Image of FIG. 2.
FIG. 2.

(Color online) (a) ID-VG characteristic curves of Ti-gate AHA-gFET after programming at various VP (=+12 – +24 V; 10 ms; step: +2 V). (b) ID-VG characteristic curves of Ti-gate AHA-gFET after erasing at various VE (=−12 to −24 V; 30 ms, step: −2 V). (c) Variation of ΔVDirac as a function of VP and VE for Ti-gate AHA-gFET.

Image of FIG. 3.
FIG. 3.

(Color online) (a) ID-VG characteristic curves of Ni-gate AHA-gFET after programming at various VP (=+16 to +32 V; 10 ms; step: +2 V). (b) ID-VG characteristic curves of Ni-gate AHA-gFET after erasing at various VE (=−16 to −32 V, 30 ms; step: −2 V). (c) Variation of ΔVDirac as a function of VP and VE for Ni-gate AHA-gFET.

Image of FIG. 4.
FIG. 4.

(Color online) Energy band diagrams of Ti- and Ni-gate AHA-gFETs at various bias conditions. Ti-gate AHA-gFET: (a) VG = 0 V, (b) VG = +V1, (c) VG = −V2, (d) VG = −V3 (≪ −V2). Ni-gate AHA-gFET: (e) VG = 0 V, (f) VG = +V1, (g) VG = −V2, (h) VG = −V3 (≪ −V2).

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/content/aip/journal/apl/100/2/10.1063/1.3675633
2012-01-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3675633
10.1063/1.3675633
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