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444.9 nm semipolar laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
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/content/aip/journal/apl/100/2/10.1063/1.3675850
2012-01-09
2014-09-21

Abstract

We demonstrate an electrically injected semipolar laser diode(LD) grown on an intentionally stress relaxed n-In0.09Ga0.91N waveguiding layer. Detrimental effects of misfit dislocations (MDs) in the proximity of the active region were effectively suppressed by utilizing a p/n-Al0.2Ga0.8N electron/hole blocking layer between the dislocated heterointerfaces and the active region. The threshold current density of the LD was ∼20.3 kA/cm2 with a lasing wavelength of 444.9 nm. This LD demonstrates an alternative approach in semipolar AlInGaN LD waveguide design where the thickness and composition of the waveguiding and/or cladding layers are not limited by the critical thickness for MD formation.

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Scitation: 444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3675850
10.1063/1.3675850
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