Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination
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(Color online) Anticipated spectrum of the negatively charged silicon vacancy utilizing the hyperfine parameters of Ref. 14 for (a) low and (b) high gain. The central part of the defect is schematically sketched on the left in (a), with C indicating carbon atoms. The solid lines indicate the center of each contribution with broadening indicated by the Gaussians around each of these lines. The spectrum shown is for the magnetic field aligned with the c-axis.
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(Color online) Experimental results of a high resolution fast passage SDR measurement at (a) low and (b) high gain. Note the close correspondence between the anticipated spectrum calculated in Figure 1 and the experimental results. Note the positions (13 and 28G separation) of the 13C hyperfine peaks. Note also the anticipated 1 to 3 ratio of the amplitudes of the 13C peaks relative to one another as well as the total integrated amplitudes of the 13C carbon peaks relative to the rest of the spectrum, close to the anticipated 4% of the total. The data was taken with the magnetic field in the direction of the c-axis.
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