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Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination
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10.1063/1.3675857
/content/aip/journal/apl/100/2/10.1063/1.3675857
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3675857
/content/aip/journal/apl/100/2/10.1063/1.3675857
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/content/aip/journal/apl/100/2/10.1063/1.3675857
2012-01-11
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3675857
10.1063/1.3675857
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