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Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance
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10.1063/1.3675862
/content/aip/journal/apl/100/2/10.1063/1.3675862
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3675862
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Number of unpaired spins as a function of gate voltage for sample B as measured at low gate voltages at 1 K (connected by dashed lines) and 3 K (connected by solid lines). At both temperatures the circles were measured in the dark and the squares were after above band gap illumination. Inset shows the gate voltage dependence measured at 3 K in a broad gate voltage range, including above and below threshold voltages. The threshold voltage in sample B is indicated by the vertical dashed line.

Image of FIG. 2.
FIG. 2.

(Color online) Density of confined electrons for samples A (diamonds) and B (circles) as a function of temperature.

Image of FIG. 3.
FIG. 3.

(Color online) Density of confined electron states as a function of energy below the conduction band for samples A (diamonds) and B (circles). The cross indicates the calculated value (1.6 ×1011 meV−1 cm−2) of the density of states in the conduction band for 2D electrons at a Si(100) surface (two-fold valley degeneracy). The dashed lines are linear fits in the regions below and above 2.25 meV.

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/content/aip/journal/apl/100/2/10.1063/1.3675862
2012-01-09
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3675862
10.1063/1.3675862
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