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Carrier mobility measurement across a single grain boundary in polycrystalline silicon using an organic gate thin-film transistor
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10.1063/1.3675863
/content/aip/journal/apl/100/2/10.1063/1.3675863
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3675863
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematics of an organic gate FET used for measuring field-effect mobility across a single grain boundary. (a) cross section, (b) top view, and (c) micrograph of a grain boundary between souce and drain electrodes.

Image of FIG. 2.
FIG. 2.

I-V characteristics of FET for measuring field-effect mobility across a single grain boundary. (a) drain current-drain voltage characteritics, (b) transfer characteristics. The measurement temperature was 297 K.

Image of FIG. 3.
FIG. 3.

Arrhenius plot of field-effect mobility measured from an FET with a channel across a single grain boundary.

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/content/aip/journal/apl/100/2/10.1063/1.3675863
2012-01-09
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier mobility measurement across a single grain boundary in polycrystalline silicon using an organic gate thin-film transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3675863
10.1063/1.3675863
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