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Ferroelectric phase transition in strained multiferroic (Bi0.9La0.1)2NiMnO6 thin films
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10.1063/1.3675869
/content/aip/journal/apl/100/2/10.1063/1.3675869
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3675869
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (left axis) Temperature dependence of the out-of-plane lattice parameter of both substrate (solid square symbols) and film (solid triangle symbols); (right axis) Temperature dependence of tetragonality of BL10NM films (star symbols). The dashed line shows the fitting (see text).

Image of FIG. 2.
FIG. 2.

(a) (Color online) Temperature dependence of Raman spectra of high frequency mode; (b) Temperature dependence of the phonon frequency (solid square symbols, left axis) and linewidth (open triangle symbols, right axis). The dashed lines indicate the slope change of the temperature dependence of phonon frequency and linewidth around TFE.

Image of FIG. 3.
FIG. 3.

(Color online) PUND measurement performed on Pt/BL10NM/Nb:STO capacitors at 5 K. Inset: Ferroelectric domain switching current versus applied voltage.

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/content/aip/journal/apl/100/2/10.1063/1.3675869
2012-01-09
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ferroelectric phase transition in strained multiferroic (Bi0.9La0.1)2NiMnO6 thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3675869
10.1063/1.3675869
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