Full text loading...
(Color online) (a) Geometry of the organic ferroelectric-graphene memory device, where W is the width and L is the length of the graphene channel. (b) Piezoelectric hysteresis loop of P(VDF-TrFE) on graphene surface, obtained using piezo-response scanning probe microscopy.
(Color online) (a) Resistance hysteresis loops for resistivity of the graphene channel vs. top-gate voltage Vtg . The two memory states (high and low resistance) at zero-bias are shown, with small black arrows indicating the direction of Vtg sweep. (b) Behavior of resistance of the two memory states as a function of time is shown, as achieving saturation.
(Color online) Exponential relation between resistance (in kΩ) and time is observed indicating time-dependent charge injection in (a) low-resistance state and (b) high-resistance state. (τ indicated is the time constant of the exponential behavior.)
Article metrics loading...