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Silicon introduced effect on resistive switching characteristics of WOX thin films
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10.1063/1.3676194
/content/aip/journal/apl/100/2/10.1063/1.3676194
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3676194
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Typical 100 cycles resistive switching I–V curves of (a) Pt/WOX/TiN and (b) Pt/WSiOX/TiN devices, respectively.

Image of FIG. 2.
FIG. 2.

(Color online) (a) The FTIR spectroscopy of WOX, WSiOX, and SiO2 films. (b) The material analysis of XPS of the W 4f core level spectrum of WOX film.

Image of FIG. 3.
FIG. 3.

(Color online) The Schematic diagrams of (a) the Pt/WOX/TiN device with varying conduct filament path and (b) the Pt/WOX/TiN device with localizing conduct filament path.

Image of FIG. 4.
FIG. 4.

(Color online) (a) The LRS and HRS statistics; (b) set voltage and reset voltage statistics of WOX and WSiOX memory devices during 100 resistance switching cycles (in DC voltage-sweep mode). The reliability of Pt/WSiOX/TiN device, (c) resistance measurements after voltage pulse cycling, (d) retention behaviors of the HRS and LRS show no degradation up to 105 s at 250 °C, and resistances are read at 0.1 V.

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/content/aip/journal/apl/100/2/10.1063/1.3676194
2012-01-10
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon introduced effect on resistive switching characteristics of WOX thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3676194
10.1063/1.3676194
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