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Single-photon emitters based on epitaxial isolated InP/InGaP quantum dots
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10.1063/1.3676273
/content/aip/journal/apl/100/2/10.1063/1.3676273
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3676273
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) PL spectra for a low-density QD ensemble. The emission at 630 nm originates from the InGaP and the emission at 650–670 nm from InP QDs. Inset graph is a magnified view of the spectrum from one of the single QDs; both excitonic (X) and biexcitonic (XX) emission can be seen.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Pl spectrum for InGaP (630 nm) and InP QDs (650-680 nm) (b) Second order correlation function of X from InP QD.

Image of FIG. 3.
FIG. 3.

(Color online) Second-order correlation function with pulsed excitation.

Image of FIG. 4.
FIG. 4.

(Color online) Fine structure splitting of 320 μeV is shown for exciton and biexciton. Linearly polarized emission lines along (90°) and [110] (0°) crystallographic directions.

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/content/aip/journal/apl/100/2/10.1063/1.3676273
2012-01-13
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Single-photon emitters based on epitaxial isolated InP/InGaP quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3676273
10.1063/1.3676273
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