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Top-gate thin-film transistors based on GaN channel layer
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10.1063/1.3676447
/content/aip/journal/apl/100/2/10.1063/1.3676447
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3676447
/content/aip/journal/apl/100/2/10.1063/1.3676447
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/content/aip/journal/apl/100/2/10.1063/1.3676447
2012-01-13
2014-08-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Top-gate thin-film transistors based on GaN channel layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/2/10.1063/1.3676447
10.1063/1.3676447
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