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(Color online) (Left) Low bias field dependence of dielectric constant measured at 10 kHz and 0.1 V oscillation levels for La-doped PZT films on LNO buffered nickel. Broken and solid lines show the data fitted with Johnson’s model and the modified Johnson model, respectively. Inset shows the loss tangent as a function of bias field. (Right) Field dependence of dielectric constant for BaTiO3,22 PZT (53/47),23 and PZT(52/48)3 thin films on different substrates found in the literature and fitted using modified-Johnson model.
(Color online) High bias field dependence of dielectric constant for ferroelectric PLZT films on LNO-buffered nickel up to 100 MV/m measured at 10 kHz and 0.1 V oscillation levels. Solid line represents the data fitted with the modified Johnson equation. Only 50% of the data points are shown to illustrate the quality of the fit. Inset shows the modified Johnson model fit for sub-coercive fields.
(Color online) Temperature dependence of the anharmonic coefficient (α) for ferroelectric PLZT (8/52/48) films on LNO buffered nickel. The correlation coefficients obtained for the fits using the modified Johnson model was >0.998 at all temperatures. Inset shows the Gibbs free energy profile for the ferroelectric and paraelectric states.
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