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Electronic effects of Se and Pb dopants in TlBr
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Image of FIG. 1.
FIG. 1.

4-gate PICTS spectra for Pb-doped and Se-doped TlBr, measured from 90 to 250 K for en , p  = 585 s−1. V+ and V− denote the sign of the voltage applied to the illuminated contact. The gain settings of the current amplifier during the measurement indicate the change in photoconductivity of each sample with temperature.

Image of FIG. 2.
FIG. 2.

Arrhenius plots for the observed levels, showing data points and the resulting linear fits. The slope of the lines represents the activation energy of each trap. The apparent capture cross section is determined from the y-intercept.

Image of FIG. 3.
FIG. 3.

CL spectra for the TlBr samples taken at 5 K. The dashed lines show a deconvolution of the two peaks evident in the Pb-doped spectrum between 1.8 and 2.5 eV.

Image of FIG. 4.
FIG. 4.

A schematic energy level diagram showing mid-gap states related to Pb- and Se-dopants in TlBr detected by PICTS. Curved arrows indicate optically active transitions measured with CL.

Image of FIG. 5.
FIG. 5.

Plots of microwave photoconductivity transient data with single exponential fits (black dashed lines) showing the ambipolar lifetime in the three TlBr samples. The different laser powers used reflect the differing efficiencies of carrier generation with sub-bandgap light in the three samples. The curves are vertically offset for clarify.


Generic image for table
Table I.

Activation energies and capture cross sections for the resolved deep levels.

Generic image for table
Table II.

Comparison of PICTS and CL data. The energy offset is calculated from the 2.68 eV indirect bandgap of TlBr.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic effects of Se and Pb dopants in TlBr