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(a) PR spectra measured at 5 K (open points) together with theoretical fit (thick grey line) and the modulus of PR resonance (dashed line); (b) normalized PL spectrum obtained at LE and HE conditions together with PL spectrum obtained by theoretical simulations with n = 1 and n = 1000; the inset in panel (b) shows the thermal quenching of PL intensity obtained at HE conditions together with the Arrhenius fit and simulation results.
Streak image of PL decay from the single Ga0.69In0.31N0.015As0.985/GaAs QW measured temperatures of (a) 10 K, (b) 20 K, (c) 40 K, and (d) 60 K.
(a)–(c) PL decay curves obtained from TRPL measurements (open circles) and theoretical simulation of PL decay curves (red solid lines) for different energies of PL peak. (d) Dispersion of PL decay times obtained from TRPL measurements (open points) and theoretical simulations (open squares) at temperatures of 10 and 40 K. The time integrated PL spectra obtained at 10 K (solid line) and 40 K (dashed line).
(a) Temperature dependence of PL decay time obtained from TRPL measurements (open circles) and theoretical simulations (red solid line) obtained at the PL peak energy of 1.033 eV. (b) Temperature dependence of dispersion strength, DS , obtained from TRPL measurements (open squares) and theoretical simulations (black solid line).
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