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Silicon germanium tin alloys formed by pulsed laser induced epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Calculated temporal evolution of the temperature at the surface and at the v-Ge/Si interface. The melting points (MP) for c-Si and c-Ge are marked; (b) “in-situ” measured sample reflectivity; (c) melt duration vs. number of laser pulses measured by surface reflectivity change (solid line is a guide to the eye).

Image of FIG. 2.
FIG. 2.

Evolution of the Raman spectra with increasing number of pulses (a) (each spectrum is shifted vertically for clearer representation) and follow up of the Ge-Ge vibration mode (b). Numbers correspond to the number of laser pulses with shift from the pure Ge vibration ΔωGe-Ge of −3, −3.3, −4.8, −6.6, and −14 cm−1 for 1, 2, 5, 10, and 100 pulses, respectively.

Image of FIG. 3.
FIG. 3.

TOF-SIMS depth profile of the sample (a) “as grown,” (b) irradiated with 5 and (c) 100 pulses of 500 mJ/cm2.

Image of FIG. 4.
FIG. 4.

TEM image of the “as grown” v-Ge/Sn (a) with magnified image of the Sn film (inset), the sample irradiated with 5 (b) and 100 (c) pulses. Magnified images close to the surface region (d) and at the strained buffer Si1 − xGex layer (e) for 100 pulse irradiation.

Image of FIG. 5.
FIG. 5.

Random (experimental data with simulation) and [001] channeling RBS spectra of a sample treated with 100 pulses of 500 mJ/cm2. The inset shows a magnification of the backscattering signal of Sn.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon germanium tin alloys formed by pulsed laser induced epitaxy