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(a) Calculated temporal evolution of the temperature at the surface and at the v-Ge/Si interface. The melting points (MP) for c-Si and c-Ge are marked; (b) “in-situ” measured sample reflectivity; (c) melt duration vs. number of laser pulses measured by surface reflectivity change (solid line is a guide to the eye).
Evolution of the Raman spectra with increasing number of pulses (a) (each spectrum is shifted vertically for clearer representation) and follow up of the Ge-Ge vibration mode (b). Numbers correspond to the number of laser pulses with shift from the pure Ge vibration ΔωGe-Ge of −3, −3.3, −4.8, −6.6, and −14 cm−1 for 1, 2, 5, 10, and 100 pulses, respectively.
TOF-SIMS depth profile of the sample (a) “as grown,” (b) irradiated with 5 and (c) 100 pulses of 500 mJ/cm2.
TEM image of the “as grown” v-Ge/Sn (a) with magnified image of the Sn film (inset), the sample irradiated with 5 (b) and 100 (c) pulses. Magnified images close to the surface region (d) and at the strained buffer Si1 − xGex layer (e) for 100 pulse irradiation.
Random (experimental data with simulation) and  channeling RBS spectra of a sample treated with 100 pulses of 500 mJ/cm2. The inset shows a magnification of the backscattering signal of Sn.
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