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Trace analysis of non-basal plane misfit stress relaxation in and semipolar InGaN/GaN heterostructures
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/content/aip/journal/apl/100/20/10.1063/1.4716465
2012-05-14
2014-12-19

Abstract

We have studied primary and secondary slip systems in the relaxation of lattice mismatch stresses in and semipolar InxGa1−xN/GaN heterostructures by analyzing the geometry of traces associated with dislocations employing cathodoluminescence,x-ray diffraction, and transmission electron microscopy. For InxGa1−xN/GaN heterostructures, the primary relaxation is by dislocation glide on the c-plane slip system and secondary relaxation is by dislocation glide on inclined planes including the m-plane slip system. For grownheterostructures non-basal slip, namely dislocation glide on the m-plane slip system, is the initial stress relaxation pathway.

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Scitation: Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/20/10.1063/1.4716465
10.1063/1.4716465
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