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Trace analysis of non-basal plane misfit stress relaxation in and semipolar InGaN/GaN heterostructures
5. A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, Appl. Phys. Lett. 95, 251905 (2009).
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14. F. Wu, E. C. Young, I. Koslow, M. T. Hardy, P. S. Hsu, A. E. Romanov, S. Nakamura, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 99, 251909 (2011).
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We have studied primary and secondary slip systems in the relaxation of lattice mismatch stresses in and semipolar InxGa1−xN/GaN heterostructures by analyzing the geometry of traces associated with dislocations employing cathodoluminescence,x-ray diffraction, and transmission electron microscopy. For InxGa1−xN/GaN heterostructures, the primary relaxation is by dislocation glide on the c-plane slip system and secondary relaxation is by dislocation glide on inclined planes including the m-plane slip system. For grownheterostructures non-basal slip, namely dislocation glide on the m-plane slip system, is the initial stress relaxation pathway.
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