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Trace analysis of non-basal plane misfit stress relaxation in and semipolar InGaN/GaN heterostructures
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Image of FIG. 1.
FIG. 1.

Cathodoluminescence micrographs of (a) the 110 nm sample showing MD lines parallel to the a-direction, (b) the 185 nm sample showing both a-direction and inclined MDs, (c) the 60 nm sample showing only inclined MDs, and (d) the 80 nm sample showing inclined MDs and a few a-direction MDs. (e) The state of relaxation for both series with solid lines indicating the Matthews-Blakeslee equilibrium critical thickness for MD formation for c-plane slip for each system.

Image of FIG. 2.
FIG. 2.

Plan view TEM images (a-b) for the 200 nm In0.06Ga0.94N sample with both a-direction and inclined MDs visible in (a) with g = , but invisible in (b) with g = 0002, and plan-view TEM of the 70 nm In0.09Ga0.91N sample showing inclined MDs (c) in contrast for g = and (d) out of contrast for g = .

Image of FIG. 3.
FIG. 3.

On-axis RSM scans for the 300 nm sample with the x-ray beam parallel to (a) the projected c-direction and (b) the a-direction. (c) Reciprocal space schematic showing orientation and location of off-axis and reflections, and asymmetric RSMs of the 300 nm sample about the (d) and (e) reflections.

Image of FIG. 4.
FIG. 4.

Schematics illustrating the orientation of the wurtzite GaN unit cell relative to (a) and (b) growth orientations, and the traces from the intersection of inclined m-planes with (c) and (d) .


Generic image for table
Table I.

Summary of trace analysis for various non-basal slip-systems on and growth orientations.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures