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Transport properties of graphene nanoribbon transistors on chemical-vapor-deposition grown wafer-scale graphene
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10.1063/1.4716983
/content/aip/journal/apl/100/20/10.1063/1.4716983
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/20/10.1063/1.4716983
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic device structure and layout of the back-gated GNR FET. (b) SEM image of the GNR with an inset showing a magnified view of the nanoribbon.

Image of FIG. 2.
FIG. 2.

Transport properties of back-gated CVD GNR FET of width 12 nm. (a) Drain current vs. back-gate voltage and temperature. (b) Common-source transistor characteristics at 4 K.

Image of FIG. 3.
FIG. 3.

(a) Differential conductance map of a 12 nm GNR FET as a function of VDS and VBG at 4 K. (b) Differential conductance and absolute drain current vs. drain-to-source voltage at a back-gate bias of 50.5 V.

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/content/aip/journal/apl/100/20/10.1063/1.4716983
2012-05-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transport properties of graphene nanoribbon transistors on chemical-vapor-deposition grown wafer-scale graphene
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/20/10.1063/1.4716983
10.1063/1.4716983
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