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(a) Top: schematic representation of triboelectrically charged PANI particles deposition on the rough SiC paper. Bottom: photograph of a PANI coated 15 µm rough surfactant adsorbed SiC (1200 grit) paper doped with TFA. (b) An AFM topographical image of the PANI layer shown in (a).
I-V characteristics and calculated sheet resistances of (a) surfactant adsorbed 15 µm rough (1200 grit) SiC paper, (b) triboelectrically charged PANI deposited (TFA-doped) on bare SiC surface, and (c) triboelectrically charged PANI deposited (TFA-doped) on surfactant adsorbed SiC surface.
Electrical conductivity of triboelectrically deposited PANI films as function of temperature treatment after wetting by TFA at room temperature. Circles denote data obtained from surfactant adsorbed SiC surfaces whereas the triangles denote the data obtained from untreated SiC surfaces. The inset shows the photograph of a highly conductive PANI film (39.3 Ω) after exposure to −5 °C for 6 h.
Effect of post temperature treatment on the TFA wetted PANI surfaces deposited on the surfactant adsorbed SiC surfaces by triboelectric charging. The surfaces were initially wet by TFA at room temperature and subsequently exposed to 40 and −15 °C. The resultant surface nanotexture after full TFA evaporation at 40 °C is shown in (a) and the resultant nanotexture after treatment at −15 °C for several hours and subsequent evaporation of TFA at room temperature is shown in (b).
Hysteretic I-V characteristics of two different PANI films biased with 200 ms delay time. Under the given delay time, the maximum hysteresis in the highly conductive film (60 Ω/□) is 0.4 V shown in (a) whereas it is 2.2 V for the less conductive film (4 kΩ/□) shown in (b). The inset shows the schematic representation of hysteresis.
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