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(a) The plan-view optical microscopy and (b) vertical scanning electron microscopy images of the fabricated V-TFT. The approximate channel length was 310 nm.
(a) The IDS-VGS characteristics of the a-IGZO V-TFTs for various VDS and (b) sub-threshold slope at VGS of 0 V and Ioff as a function of VDS, where Ioff is defined IDS at VGS of −10 V.
TCAD simulation results of thetransfer characteristics considering the different drain electrode length (5–600 nm), where the defects densities in (a) is assumed to be larger than that of (b) by one order of magnitude. Detailed defect densities are marked in the figures.
(a) Sub-threshold slope and Ion current as a function of VDS, where Ion is defined IDS at VGS of 10 V. IDS-VGS characteristics for various VDS in (b) forward bias direction and (c) reverse bias direction.
IDS as a function of VDS for various VGS in (a) forward bias direction and (b) reverse bias direction.
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