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Aharonov-Bohm effect in an electron-hole graphene ring system
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Four probe resistance measurements over the ring versus backgate voltage. The inset shows an atomic force microscope picture of the sample. (b) Schematic picture of the graphene ring with different charge carriers in the ring. (c) Longitudinal resistance and Hall conductivity versus backgate voltage with a magnetic field of 13 T applied. (d) Resistance measurements for different topgate and backgate voltages showing two charge neutrality lines.

Image of FIG. 2.
FIG. 2.

Aharonov-Bohm oscillations: (a) Four probe resistance measurements over the ring versus a perpendicular magnetic field at a constant backgate voltage . (b) Same oscillations with subtracted background resistance. The period of the oscillations is 16 mT. (c) Fourier spectrum of the oscillations (red) and a Gaussian fit (black).

Image of FIG. 3.
FIG. 3.

Aharonov-Bohm oscillations dependent of the carrier type and concentration. (a) The effective (green) and relative (blue) amplitude. The asymmetry in the background resistance (red) is a direct proof of the pnp junction in the ring. Insets are a schematic picture of the charge carrier types in the ring influenced by topgate potential. AB oscillations with the resistance background subtracted are shown for unipolar hole- (b) and bipolar electron-hole measurements (c) with a corresponding Fourier spectrum and fitting curves for both oscillations (d) and (e).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Aharonov-Bohm effect in an electron-hole graphene ring system