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Partially filled intermediate band of Cr-doped GaN films
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) XRD patterns of samples with a 0.5-μm-thick as-deposited film grown on a MOCVD GaN template layer. (b) Cr L 2,3 XRF spectra of the samples with 0 and 9% Cr. Measured spectra of Cr L 2,3 in Cr metal and (Fe,Mg)Cr2O4 are also shown in the upper part of the panel as a reference standard of Cr(0) and Cr(III), respectively. (c) Optical absorption spectra of films with 0 and 9% Cr sputtered on Al2O3 substrate. The inset shows a direct transition plot of the films. (d) PYS spectra of the films with 0, 4.6, and 9% Cr. (e) Summary of the results of the optical absorption and PYS measurements.

Image of FIG. 2.
FIG. 2.

(a) I-V curves of the film with 9% Cr. The main panel shows a magnified view of the region around 0 V in the inset. (b), (c) Schematic structure of type A and type B devices, respectively. (d) I-V curves of the devices under dark conditions. (e) I-V curves of the devices under 1 sun irradiation. Band alignment of (f) a type A device and (g) a type B device during operation.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Partially filled intermediate band of Cr-doped GaN films