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(a) Schematic device structure, (b) out-put characteristic curves measured at a constant VG of 5 V, and (c) transfer characteristic curves measured at a constant VD of 3 V for the TFTs with untreated and O2-plasma treated a-IGZO channel layers prepared at different annealing temperatures.
Cross-sectional TEM images and Fourier transform of the (a) and (b) untreated and (c) and (d) plasma treated a-IGZO films prepared at 400 °C.
FTIR spectra of untreated and 45s O2-plasma treated IGZO films before high temperature annealing.
O 1s XPS spectra of the (a) untreated and (b) 45s O2-plasma treated a-IGZO films prepared at 400 °C. The solid circles and lines represent the experimental data and Gaussian peak fitting results, respectively.
Electrical parameters of a-IGZO TFTs prepared at different annealing temperatures.
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