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Pressure induced transverse magnetoresistance in magnetic field H ≥ 5 kOe for Cd0.82Mn0.18GeAs2 (a) and Cd0.94Mn0.06GeAs2 (b). Pressure induced hysteresis of transverse magnetoresistance in magnetic field H = 5 кOe for Cd0.82Mn0.18GeAs2 (c) and Cd0.94Mn0.06GeAs2 (d) at pressure increase and pressure decrease.
Pressure dependences of relative magnetic susceptibility for Cd1−xMnxGeAs2 with x = 0.06 − 0.30 (a). Pressure dependence of relative magnetic susceptibility for Cd0.70Mn0.30GeAs2 at pressure increase and pressure decrease (b). Temperature dependence of magnetization M(T) in magnetic field 50 kOe of CdGeAs2:Mn polycrystalline samples with 0.5, 1, 3, and 6 mass % Mn (respectively, x = 0.06, 0.18, 024, 0.3) (c).
Pressure dependences of relative volume changes ΔV(P)/V0 on the pressure for Cd1−xMnxGeAs2.
Pressure dependences of bulk modulus B for Cd1−xMnxGeAs2. Solid line—calculation by formula (4) for the sample with x = 0.30.
Magnetic and magnetovolume properties.
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