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Magnitude-tunable sub-THz shear phonons in a non-polar GaN multiple-quantum-well p-i-n diode
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Coordinate adopted to express the effective piezoelectric constants in Eqs. (1)–(4). (b) Schematic diagram of the m-plane p-i-n structure. The epitaxial direction is along . (c) X-ray diffraction measurement of the MQWs. The spatial period of the MQWs is estimated to be 12.5 nm.

Image of FIG. 2.
FIG. 2.

(a) Measured transmission changes as a function of delay time for the unbiased (with built-in voltage −2.1 V) m-plane p-i-n diode under a pump fluence of 320 J/cm−2. (b) Background-removed signals with the voltage jumps of −2.1 V (red circles), −9.1 V (blue triangles), and −13.1 V (olive squares) in former 13 ps to display the TA phonon oscillations.

Image of FIG. 3.
FIG. 3.

(a) Corresponding Fourier power spectra of pump probe signal shown in Fig. 2. The red dots in the inset are the pick values of the Fourier power spectra for different voltage jumps. (b) The calculated density distributions of electrons , holes , and space charges in the quantum well with various voltage jumps indicated by the colour bars. The normalized intensity of the corresponding piezoelectric driving forces is displayed by the blue curve in the inset of (a).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Magnitude-tunable sub-THz shear phonons in a non-polar GaN multiple-quantum-well p-i-n diode