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Control of tensile strain in germanium waveguides through silicon nitride layers
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10.1063/1.4718525
/content/aip/journal/apl/100/20/10.1063/1.4718525
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/20/10.1063/1.4718525
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Figures

Image of FIG. 1.
FIG. 1.

(a) Scanning electron microscope image of the tensile-strained germanium waveguide. (b) Two-dimensional profile of the hydrostatic strain component in the germanium film. The width of the waveguide is 4 μm. The hydrostatic stress in the nitride film is 4.5 GPa. The right scale corresponds to the amplitude of the hydrostatic strain component.

Image of FIG. 2.
FIG. 2.

(a) left: Room temperature photoluminescence spectra for variable waveguide widths. The smooth lines correspond to the modeling. The initial hydrostatic stress in the nitride film is 3 GPa. (b) Same as in (a), but for the 4.5 GPa nitride stressor. The curves have been offset for clarity. The difference in the thickness of the nitride layer contributes to the difference in amplitude. The indirect band gap recombination at low energy is not taken into account in the modeling.

Image of FIG. 3.
FIG. 3.

Room temperature photoluminescence spectra for samples with variable widths and distinct orientations. The thick lines correspond to the 〈100〉 ridge direction. The dashed lines correspond to the 〈110〉 direction. The curves have been offset for clarity. The inset shows schematically the effect of the orientation on the energy splitting.

Image of FIG. 4.
FIG. 4.

Calculated room temperature ratio between the electron concentration in the Γ valley and the total electron concentration as a function of the uniaxial strain. The calculation is performed for two distinct orientations of the ridge. The inset shows the comparison between the predicted photoluminescence amplitude ratio between 〈100〉 and 〈110〉 orientations (full line) and the experimental data (squares).

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/content/aip/journal/apl/100/20/10.1063/1.4718525
2012-05-15
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control of tensile strain in germanium waveguides through silicon nitride layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/20/10.1063/1.4718525
10.1063/1.4718525
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