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(a) Schematic illustration of the device structure. The device was consisted of a 220 nm Co/Ni wire with Hall-bar structure. Two Au/Ti electrodes were attached to the wire, and the DW motion was detected by measuring the anomalous Hall resistance. (b) Relation between J and the v measured at various T s.
Relation between J and the v measured at T d = 275 ± 25 K and 375 ± 25 K. The solid lines show the results of linear fitting to v.
T d dependence of P 1 and P 2.The temperature dependence of M s and normalized M s are shown in the inset.
Temperature dependence of the spin—dependent conductivities σup and σdown. σtotal is the sum of σup and σdown.
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