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Temperature dependence of carrier spin polarization determined from current-induced domain wall motion in a Co/Ni nanowire
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10.1063/1.4718599
/content/aip/journal/apl/100/20/10.1063/1.4718599
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/20/10.1063/1.4718599
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic illustration of the device structure. The device was consisted of a 220 nm Co/Ni wire with Hall-bar structure. Two Au/Ti electrodes were attached to the wire, and the DW motion was detected by measuring the anomalous Hall resistance. (b) Relation between J and the v measured at various T s.

Image of FIG. 2.
FIG. 2.

Relation between J and the v measured at T d = 275 ± 25 K and 375 ± 25 K. The solid lines show the results of linear fitting to v.

Image of FIG. 3.
FIG. 3.

T d dependence of P 1 and P 2.The temperature dependence of M s and normalized M s are shown in the inset.

Image of FIG. 4.
FIG. 4.

Temperature dependence of the spin—dependent conductivities σup and σdown. σtotal is the sum of σup and σdown.

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/content/aip/journal/apl/100/20/10.1063/1.4718599
2012-05-17
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of carrier spin polarization determined from current-induced domain wall motion in a Co/Ni nanowire
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/20/10.1063/1.4718599
10.1063/1.4718599
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