Full text loading...
The center figure shows the experimental result reported in the paper.1 The diagrams (a)-(d) schematically show the different stages of the switching procedure.
Formation energy diagram of an interstitial Ag atom. VB and CB represent the valence band edge and the conduction band edge of the Si layer, respectively. The curves (a1) and (a2) show the formation energy Ef of a Ag atom at the T-site in charge states q = 0 and q = 1, respectively. The curves (b1) and (b2) show the formation energy Ef of a Ag atom in the optimized atomistic structures (b1) and (b2), respectively.
Formation energies of the Si unit cell containing the Ag wires. The figures (a)-(d) show the optimized atomistic structures for each wire number. The structure (c) is the same as that in Fig. ???.
Calculated band structures of the Si unit cell (left) and that containing a Ag atom in the charge state q = 0 located at the T-site (right). The dashed circle in the right-hand figure indicates the energy level associated with the 5 s orbital of Ag. Horizontal lines at 0 eV denote the Fermi-energy positions.
Simulated I-V characteristics in log scale. The inset shows the filament length l(t) versus applied voltage V(t).
Article metrics loading...