banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
In situ etched gratings embedded in AlGaAs for efficient high power 970 nm distributed feedback broad-area lasers
Rent this article for


Image of FIG. 1.
FIG. 1.

Structuring of a DFB grating. (a) Surface after ex-situ pre-structuring of the GaAs cap-layer. (b) Surface after in-situ etching with CBr4, the InGaP is completely removed between the GaAs caps. (c) InGaP grating with thin GaAs cap floating in AlGaAs after the second epitaxy.

Image of FIG. 2.
FIG. 2.

(a) TEM micrograph of a floating grating (10 nm In0.49Ga0.51P). (b) In-specific signal of an EDXS scan of the same region as in (a). (c) SIMS depth profiles of oxygen and aluminum after different in-situ etching times.

Image of FIG. 3.
FIG. 3.

(a) Calculated coupling coefficient of a DFB grating (10 nm In0.49Ga0.51P) after different etching times. Blue squares: Second order grating with dc = 0.25, 770 nm above the DQW. Red triangles: First order grating with dc = 0.50, 100 nm above the DQW. Black circles: Experimentally determined coupling coefficients (second order grating, dc = 0.25, 770 nm above the DQW). (b) Measured ASE spectrum (black dots) of a 1.5 mm long DFB-RW laser and fit-curve (red solid line).

Image of FIG. 4.
FIG. 4.

(a) Inverse differential quantum efficiency as a function of the cavity length. The internal losses are 1.0 cm−1 ± 0.1 cm−1 for 100/200 μm wide DFB-BA and FP-BA reference lasers. (b) Sample voltage characteristics of a FP-BA reference laser and a DFB-BA laser (10 nm In0.49Ga0.51P grating).

Image of FIG. 5.
FIG. 5.

(a) Voltage, power, and wallplug efficiency characteristics of a DFB-BA laser (100 μm× 3000 μm, R f = 0.01%, and R r = 98%, p-down, 10 nm (In0.49Ga0.51P)). (b) DFB locking range with locked output power, shown as a false color plot, with un-locked regions (black). Inset: Sample spectrum at 8.9 A, 25 °C (position marked with *) and 8 W output power.

Image of FIG. 6.
FIG. 6.

(a) CW injection current I, divided through the individual start current I s for 10 W of five DFB-BA lasers (L = 3000 μm, W = 90 μm). (b) Corresponding CW optical output power.


Generic image for table
Table I.

Peak volume impurity density ρ peak from the oxygen signal of the SIMS and calculated areal impurity density ρ areal for different in-situ etching times t is.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ etched gratings embedded in AlGaAs for efficient high power 970 nm distributed feedback broad-area lasers