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Structuring of a DFB grating. (a) Surface after ex-situ pre-structuring of the GaAs cap-layer. (b) Surface after in-situ etching with CBr4, the InGaP is completely removed between the GaAs caps. (c) InGaP grating with thin GaAs cap floating in AlGaAs after the second epitaxy.
(a) TEM micrograph of a floating grating (10 nm In0.49Ga0.51P). (b) In-specific signal of an EDXS scan of the same region as in (a). (c) SIMS depth profiles of oxygen and aluminum after different in-situ etching times.
(a) Calculated coupling coefficient of a DFB grating (10 nm In0.49Ga0.51P) after different etching times. Blue squares: Second order grating with dc = 0.25, 770 nm above the DQW. Red triangles: First order grating with dc = 0.50, 100 nm above the DQW. Black circles: Experimentally determined coupling coefficients (second order grating, dc = 0.25, 770 nm above the DQW). (b) Measured ASE spectrum (black dots) of a 1.5 mm long DFB-RW laser and fit-curve (red solid line).
(a) Inverse differential quantum efficiency as a function of the cavity length. The internal losses are 1.0 cm−1 ± 0.1 cm−1 for 100/200 μm wide DFB-BA and FP-BA reference lasers. (b) Sample voltage characteristics of a FP-BA reference laser and a DFB-BA laser (10 nm In0.49Ga0.51P grating).
(a) Voltage, power, and wallplug efficiency characteristics of a DFB-BA laser (100 μm× 3000 μm, R f = 0.01%, and R r = 98%, p-down, 10 nm (In0.49Ga0.51P)). (b) DFB locking range with locked output power, shown as a false color plot, with un-locked regions (black). Inset: Sample spectrum at 8.9 A, 25 °C (position marked with *) and 8 W output power.
(a) CW injection current I, divided through the individual start current I s for 10 W of five DFB-BA lasers (L = 3000 μm, W = 90 μm). (b) Corresponding CW optical output power.
Peak volume impurity density ρ peak from the oxygen signal of the SIMS and calculated areal impurity density ρ areal for different in-situ etching times t is.
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