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Memory effects in electrochemically gated metallic point contacts
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View: Figures


Image of FIG. 1.
FIG. 1.

Experimental observation of transient conductance changes at the closing and opening edges of switching events. The experimental set-up is shown in (a). A sequence of controlled switching events between the non-conducting “off-state” and the quantized conducting “on-state” is displayed in (b), where the quantum conductance of the switch follows the gate potential. The gate potential varies between 6 mV and −35 mV. Zoom-in at three experimentally observed closing events and the corresponding opening events contained in (b) is shown in (c) and (d) in 6 graphs, respectively. The negative spikes in (d) come from the measurement electronic circuits.

Image of FIG. 2.
FIG. 2.

(a) Color coded histograms of the frequency of intermediate values of the conductance in subsequent switching cycles between the “off” (0 G 0 = 2e 2/h) state and “on” (1 G0). Every column of the plotted matrix represents one histogram with color coded histogram-height, the repeated occurrence of fractional conductance values in subsequent switching events indicated a correlation in the switching behavior. (b) Plot of the pair-correlation function f(c,c’) for the sequence of conductance histograms. The contour-plot on the bottom of the graph shows a significant memory effect between subsequent intermediate levels in the range below 0.5 G0. In the absence of correlation, the correlation function would be constant.

Image of FIG. 3.
FIG. 3.

(a) Electrostatic potential of single atom transistor screened by ions of the electrolyte. κ −1 denotes the thickness of the electrolytic double layer. (b) Total conductance of ten different single atom transistor conformations during a contact closing process in a computer simulation. All ten bi-stable conformations show weak plateaus at non-integer conductance values.


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Scitation: Memory effects in electrochemically gated metallic point contacts