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Ultra-low resistance ohmic contacts in graphene field effect transistors
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) A schematic of ohmic metal scheme to graphene, where the graphene channel is n-type. (b) An equivalent circuit for the ohmic contact resistance as series resistor network. (c) AFM scan of 10 × 10 µm2 graphene surface prior to ohmic metal deposition. (d) A SEM image of TLM pattern with 0.5 µm contact separation. (e) The source-drain current of a HFO2/graphene FET with source-drain separation of 2 µm and Vds = 50 mV.

Image of FIG. 2.
FIG. 2.

(a) Measured TLM resistance values versus contact separations of 0.25 to 32 µm are plotted. (b) An expanded view of TLM resistance plot over 0.25 to 8 µm is shown. The contact width was 22 µm.

Image of FIG. 3.
FIG. 3.

The current-voltage characteristics of the graphene FET is shown with the source-drain current as high as 2.2 A/mm at Vds = 1.5 V with on-resistance of 550 Ω µm. An inset shows a SEM image of a short-channel HFO2/graphene FET, where the source-drain separation is 0.46 µm and the gate length is 0.25 µm. The dotted line represents the source-drain current at the Dirac point where the current is determined by a hole current, rather than an electron current.

Image of FIG. 4.
FIG. 4.

(a) A schematic of band alignment at a metal-graphene interface (case of ΦM < ΦG) and associated effective doping of graphene material. (b) Doping density n in graphene as a function of the metal-graphene work function difference and a metal-to-graphene distance d.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultra-low resistance ohmic contacts in graphene field effect transistors