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Heating asymmetry induced by tunneling current flow in magnetic tunnel junctions
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10.1063/1.4719663
/content/aip/journal/apl/100/20/10.1063/1.4719663
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/20/10.1063/1.4719663
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Minor hysteresis loops associated with the storage layer before and after application of 50 ns pulses of 50 mW μm−2 under a magnetic field of ±300 Oe.

Image of FIG. 2.
FIG. 2.

Reversal of the exchange bias field of the storage layer magnetization by applying heating pulses of various power and duration from 10 ns up to 1 ms under +300 Oe. (a) Voltage pulse of positive polarity was used i.e., electrons tunneling from reference layer to storage layer. Between each experiment, the magnetization of the storage layer is reset in a −300 Oe field (inducing a positive exchange bias) and written in a +300 Oe field (inducing a negative exchange bias). (b) Voltage pulse of negative polarity was used i.e., electrons tunneling from storage layer to reference layer. As before, between each experiment, the magnetization of the storage layer is reset in a −300 Oe field and written in a +300 Oe field.

Image of FIG. 3.
FIG. 3.

Write power density required to write the storage layer versus heating pulse duration from 10 ns to 1 ms.

Image of FIG. 4.
FIG. 4.

Thermal simulation of the temperature profile throughout the studied structure.

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/content/aip/journal/apl/100/20/10.1063/1.4719663
2012-05-18
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Heating asymmetry induced by tunneling current flow in magnetic tunnel junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/20/10.1063/1.4719663
10.1063/1.4719663
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