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Minor hysteresis loops associated with the storage layer before and after application of 50 ns pulses of 50 mW μm−2 under a magnetic field of ±300 Oe.
Reversal of the exchange bias field of the storage layer magnetization by applying heating pulses of various power and duration from 10 ns up to 1 ms under +300 Oe. (a) Voltage pulse of positive polarity was used i.e., electrons tunneling from reference layer to storage layer. Between each experiment, the magnetization of the storage layer is reset in a −300 Oe field (inducing a positive exchange bias) and written in a +300 Oe field (inducing a negative exchange bias). (b) Voltage pulse of negative polarity was used i.e., electrons tunneling from storage layer to reference layer. As before, between each experiment, the magnetization of the storage layer is reset in a −300 Oe field and written in a +300 Oe field.
Write power density required to write the storage layer versus heating pulse duration from 10 ns to 1 ms.
Thermal simulation of the temperature profile throughout the studied structure.
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