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Defects and dc electrical degradation in CaCu3Ti4O12 ceramics: Role of oxygen vacancy migration
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10.1063/1.4720151
/content/aip/journal/apl/100/20/10.1063/1.4720151
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/20/10.1063/1.4720151

Figures

Image of FIG. 1.
FIG. 1.

I-V characteristics of the samples at room temperature. Dielectric spectra of samples at 233 K are in the inset.

Image of FIG. 2.
FIG. 2.

Frequency dependence of electric modulus for samples A and B at different temperature. The inset shows the activation energies of different defect relaxations calculated by Arrhenius law. (a) and (b)–sample A. (c) and (d)–sample B.

Image of FIG. 3.
FIG. 3.

Frequency dependence of conductivity for sample A and B. The inset shows the conduction activation energies calculated by Arrhenius law. The conductivity begins to increase nonlinearly after the frequency exceeds the crossover frequency (f c) at each temperature. (a)–sample A. (b)–sample B.

Tables

Generic image for table
Table I.

Electrical parameters of the CCTO ceramics for samples A and B.

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/content/aip/journal/apl/100/20/10.1063/1.4720151
2012-05-18
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defects and dc electrical degradation in CaCu3Ti4O12 ceramics: Role of oxygen vacancy migration
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/20/10.1063/1.4720151
10.1063/1.4720151
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