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Structure and growth mechanism of quasi-aligned GaN layer-built nanotowers
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10.1063/1.4717743
/content/aip/journal/apl/100/21/10.1063/1.4717743
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4717743
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Figures

Image of FIG. 1.
FIG. 1.

(a)-(c) SEM images of GaN layer-built nanotowers on Si substrates with 2-, 12 -, and 50-Å-thick Ni films at 800 °C, respectively. The inset is the magnified layer-built nanotowers. (d) XRD pattern of GaN nanotowers on Si substrates with 2 Å film at 800 °C. (e) PL spectrum of the GaN film on a Si(111) substrate at room temperature. A He-Cd laser excitation source (325 nm) was used for these experiments.

Image of FIG. 2.
FIG. 2.

SEM image of GaN nanoparticles grown on Si(111) substrates with 2-Å-thick Ni film at 800 °C for 5 min.

Image of FIG. 3.
FIG. 3.

(a) SEM image of the hexagonal prismatic GaN nanoparticles shown in Figure 2. (b) Simulation of the morphology of the particle shown in (a). (c) SEM image of the layer-built nanotower shown in Figure 1. (d) Simulation of the morphology of the layer-built nanotower shown in (c).

Image of FIG. 4.
FIG. 4.

(a) TEM image for a single GaN layer-built nanotower. (b) HRTEM image of the single layer-built nanotower. The inset is the corresponding SAED pattern. (c) EDX spectrum of the single layer-built nanotower.

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/content/aip/journal/apl/100/21/10.1063/1.4717743
2012-05-21
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structure and growth mechanism of quasi-aligned GaN layer-built nanotowers
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4717743
10.1063/1.4717743
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