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(a)-(c) SEM images of GaN layer-built nanotowers on Si substrates with 2-, 12 -, and 50-Å-thick Ni films at 800 °C, respectively. The inset is the magnified layer-built nanotowers. (d) XRD pattern of GaN nanotowers on Si substrates with 2 Å film at 800 °C. (e) PL spectrum of the GaN film on a Si(111) substrate at room temperature. A He-Cd laser excitation source (325 nm) was used for these experiments.
SEM image of GaN nanoparticles grown on Si(111) substrates with 2-Å-thick Ni film at 800 °C for 5 min.
(a) SEM image of the hexagonal prismatic GaN nanoparticles shown in Figure 2. (b) Simulation of the morphology of the particle shown in (a). (c) SEM image of the layer-built nanotower shown in Figure 1. (d) Simulation of the morphology of the layer-built nanotower shown in (c).
(a) TEM image for a single GaN layer-built nanotower. (b) HRTEM image of the single layer-built nanotower. The inset is the corresponding SAED pattern. (c) EDX spectrum of the single layer-built nanotower.
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