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Vacuum nanoelectronics: Back to the future?—Gate insulated nanoscale vacuum channel transistor
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10.1063/1.4717751
/content/aip/journal/apl/100/21/10.1063/1.4717751
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4717751
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Structures of vacuum devices and analogues to conventional MOSFET. (a) Vertical field-emitter, (b) planar lateral field-emitter, (c) MOSFET, and (d) gate-insulated air channel transistor.

Image of FIG. 2.
FIG. 2.

Top view of SEM images of the photoresist. Initial resist with a line width of 180 nm was trimmed down to (a) 60 nm and (b) 30 nm. (c) Further trimming resulted in two separated patterns with a sharp concave tip. (d) Subsequent resist reflow process softened and rounded by the thermal reflow.

Image of FIG. 3.
FIG. 3.

Energy band diagram of the vacuum channel transistor for (a) VG < Vturn-on and (b) VG > Vturn-on.

Image of FIG. 4.
FIG. 4.

(a) Simulation results for the turn-on voltage for two different emitter shapes; square symbols for hemiellipsoid tips and circle symbols for sharp tips. The difference in turn-on voltage for the two structures becomes reduced as the emitter-to-collector distance decreases. (b) Ic Vg for Vc = 10 V, (c) Ic Vc characteristics for Vg = 5, 6, 7, and 8 V, and (d) Ig Vg characteristics for Vc = 10 V.

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/content/aip/journal/apl/100/21/10.1063/1.4717751
2012-05-23
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Vacuum nanoelectronics: Back to the future?—Gate insulated nanoscale vacuum channel transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4717751
10.1063/1.4717751
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