1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
High-quality germanium dioxide thin films with low interface state density using a direct neutral beam oxidation process
Rent:
Rent this article for
USD
10.1063/1.4719099
/content/aip/journal/apl/100/21/10.1063/1.4719099
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4719099
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XPS spectra of Ge 3d region of Ge substrate (a) before, (b) after DHF treatment, and (c) after H radical treatment.

Image of FIG. 2.
FIG. 2.

C-V characteristics of Au/Al2O3/GeO2/Ge MOS capacitors by using NBO with the H radical treatment. (a) 3-nm-thick GeO2 and 5-nm-thick Al2O3 film, (b) 1.5-nm-thick GeO2 and 5-nm-thick Al2O3 film, and (c) 1-nm-thick GeO2 and 1-nm-thick Al2O3 film. The EOT values of them are 5.5, 4.5, and 1.7 nm, respectively.

Image of FIG. 3.
FIG. 3.

Estimated interface state density (Dit) of Au/Al2O3/GeO2/Ge MOS capacitor structure by using NBO with H radical treatment. (a) 3-nm-thick GeO2 and 5-nm-thick Al2O3 film, (b) 1.5-nm-thick GeO2 and 5-nm-thick Al2O3 film, and (c) 1-nm-thick GeO2 and 1-nm-thick Al2O3 film.

Loading

Article metrics loading...

/content/aip/journal/apl/100/21/10.1063/1.4719099
2012-05-22
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-quality germanium dioxide thin films with low interface state density using a direct neutral beam oxidation process
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4719099
10.1063/1.4719099
SEARCH_EXPAND_ITEM