Full text loading...
Specific resistivity of InP:Fe as function of Fe effusion cell temperature for a growth rate of 0.3 nm/s and with various substrate temperatures.
Current density as a function of applied voltage for a 3-μm InP:Fe film with a specific resistivity for low bias voltages of . The solid line is a fit following Ref. 20 with excess current due to space-charge limited current.
Conduction band diagram and probability functions calculated within a single period of the active region with a 45 kV/cm electric field. The layer thickness in nm from left to right starting from the injection barrier are: 3.6/2.0/0.9/6.7/1.0/5.0/1.0/6.2/1.0/4.3/2.3/3.9/2.1/3.8/1.9/3.7/1.9/3.6/2.1/3.2/2.3/3.2. In0.52Al0.48As layers are in bold and In0.53Ga0.47As layers are in roman. Underlined layers are doped to . The moduli square of the wavefunctions (1 and 2) responsible for the laser transition is drawn with the thick lines.
Scanning electron microscope image of the facet of a complete BH QCL grown by GSMBE. The top Au:Ge contact is locally alloyed through the top InP:Fe. Dashes highlight the interfaces between the various layers as indicated.
Pulsed threshold current density vs. reciprocal laser length compared for the BH and reference QCLs. A linear fit of the data (dashed lines) indicates a larger optical confinement factor for the BH lasers, but also somewhat waveguide losses.
Article metrics loading...