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Buried-heterostructure quantum-cascade laser overgrown by gas-source molecular-beam epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

Specific resistivity of InP:Fe as function of Fe effusion cell temperature for a growth rate of 0.3 nm/s and with various substrate temperatures.

Image of FIG. 2.
FIG. 2.

Current density as a function of applied voltage for a 3-μm InP:Fe film with a specific resistivity for low bias voltages of . The solid line is a fit following Ref. 20 with excess current due to space-charge limited current.

Image of FIG. 3.
FIG. 3.

Conduction band diagram and probability functions calculated within a single period of the active region with a 45 kV/cm electric field. The layer thickness in nm from left to right starting from the injection barrier are: 3.6/2.0/0.9/6.7/1.0/5.0/1.0/6.2/1.0/4.3/2.3/3.9/2.1/3.8/1.9/3.7/1.9/3.6/2.1/3.2/2.3/3.2. In0.52Al0.48As layers are in bold and In0.53Ga0.47As layers are in roman. Underlined layers are doped to . The moduli square of the wavefunctions (1 and 2) responsible for the laser transition is drawn with the thick lines.

Image of FIG. 4.
FIG. 4.

Scanning electron microscope image of the facet of a complete BH QCL grown by GSMBE. The top Au:Ge contact is locally alloyed through the top InP:Fe. Dashes highlight the interfaces between the various layers as indicated.

Image of FIG. 5.
FIG. 5.

Pulsed threshold current density vs. reciprocal laser length compared for the BH and reference QCLs. A linear fit of the data (dashed lines) indicates a larger optical confinement factor for the BH lasers, but also somewhat waveguide losses.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Buried-heterostructure quantum-cascade laser overgrown by gas-source molecular-beam epitaxy