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Plasmonic versus dielectric enhancement in thin-film solar cells
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View: Figures


Image of FIG. 1.
FIG. 1.

The periodic solar cell structure with period p. The strip on the surface with thickness t and width w can consist of the 5 different materials Ag, Au, Al, Si, and SiO2. The structure is illuminated from above at normal incidence with either or polarization. The insert in the lower right corner outlines the periodic modeling domain including PML regions.

Image of FIG. 2.
FIG. 2.

Left column: Maps of the absorption enhancements in a Si thin film (a = 50 nm) as a function of reciprocal lattice constant and photon energy . (a) and (c): Results for Ag strips and . For example: Results for Si strips. The highest short-circuit current is indicated by a vertical line (p = 279 nm for Ag and p = 249 nm for Si). For field patterns associated with points a–d, see panels (a)–(d) in Fig. 3. Right column: Plots of corresponding relative losses in the strips for the Ag and Si cases, respectively.

Image of FIG. 3.
FIG. 3.

Normalized field patterns and , with (a)–(d) associated with points a–d indicated in Fig. 2. (a) and 2(b) are for Ag strips and (c) and (d) illustrate coupling to similar slab-waveguide modes for Si strips.

Image of FIG. 4.
FIG. 4.

(a) The short-circuit current (normalized to bare structure) as function of the period p for the 5 different strip materials. (b) Short-circuit current (normalized to bare structure) as function of the thickness t for Ag and Si strips. Each indicated point corresponds to the best value found on the curve from a study over the period interval used in (a).


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Scitation: Plasmonic versus dielectric enhancement in thin-film solar cells