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Cold ion beam sculpting. (a)Schematic of ion sculpting system. (b) Count rate trace of cold ion beam sculpting of a 50 nm diameter nanopore in a SiN membrane. Data points indicate count rates for successive ion pulses. The line is merely a guide to the eye and is not a fit to the data. Inset: plan view TEM image of resulting nanopore.
Control of nanopore diameter using CIBS. Nanopore diameter as a function of adjusted final ion counts. The thick blue line indicates the expected pore diameters based on the ion flux; its width is due to uncertainty in the ion flux. Data markers represent diameters of CIBS nanopores fabricated in a SiN membrane as measured by TEM. Insets: TEM images of the nanopores from which the nanopore diameters were measured.
Cross-sectional TEM images of CIBS and other nanopores. (a)-(d) Top: cross-sectional TEM images of nanopore edges with cubic polynomial fits of edge profiles (black curves). Bottom left: larger field of view cross-sectional TEM images. Bottom right: plan view TEM images of nanopores. (a) 6 nm diameter CIBS nanopore from a deep cavity. (b) 33 nm diameter CIBS nanopore from a shallow cavity. (c) 20 nm diameter room-temperature ion sculpted nanopore. (d) 6 nm diameter electron drilled nanopore.
DNA translocations through an 8 nm CIBS pore. (a) Noise power spectral density of current through nanopore with no bias (cyan) and with 200 mV bias (red) in 100 mM KCl, pH 10. The dashed line indicates expected thermal noise. (b) Histogram of 108 DNA translocation events with a 200 mV bias (10 kbp dsDNA in 100 mM KCl solution), showing clustering around 57 pA, 132 μs events. White traces: 3 typical current-time traces of translocation events.
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