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Ultrafast optical response originating from carrier-transport processes in undoped GaAs/n-type GaAs epitaxial structures
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10.1063/1.4720157
/content/aip/journal/apl/100/21/10.1063/1.4720157
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4720157
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Conduction-band energy profile of an i-GaAs (200 nm)/n-GaAs (3 µm, 3 × 1018 cm−3) epitaxial structure as a function of distance from the surface. The dashed line indicates the Fermi level.

Image of FIG. 2.
FIG. 2.

Calculated results of carrier distributions of the i-GaAs (200 nm)/n-GaAs (3 µm, 3 × 1018 cm−3) epitaxial structure as a function of distance from the surface.

Image of FIG. 3.
FIG. 3.

Time-resolved reflectivity changes in the i-GaAs (d nm)/n-GaAs samples and the i-GaAs bulk sample. The signals are normalized by the peak value.

Image of FIG. 4.
FIG. 4.

Fitted result (solid curve) of the time-resolved reflectivity change in the i-GaAs (200 nm)/n-GaAs sample.

Image of FIG. 5.
FIG. 5.

Decay time of the fast component of the time-resolved reflectivity change in the i-GaAs (d nm)/n-GaAs sample as a function of d, where the top axis indicates the built-in electric field strength in the i-GaAs layer. The dashed line indicates the decay time of the i-GaAs bulk sample for comparison.

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/content/aip/journal/apl/100/21/10.1063/1.4720157
2012-05-22
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrafast optical response originating from carrier-transport processes in undoped GaAs/n-type GaAs epitaxial structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4720157
10.1063/1.4720157
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